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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
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Cautions
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2SC5623
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
ADE-208-977 (Z) 1st. Edition Nov. 2000 Features
* High gain bandwidth product fT = 26 GHz typ. * High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz
Outline
CMPAK-4
2 3 1 4
1. Emitter 2. Collector 3. Emitter 4. Base
Note: Marking is "WH-".
2SC5623
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 10 3.5 1 12 50 150 -55 to +150 Unit V V V mA mW C C
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CBO I CEO I EBO hFE Cob fT PG NF Min 10 -- -- -- 60 -- 23 14 -- Typ -- -- -- -- 100 0.15 26 18 1.8 Max -- 1 1 10 140 0.4 -- -- 2.3 Unit V A A A V pF GHz dB dB Test Conditions I C = 10 A , IE = 0 VCB = 8 V , IE = 0 VCE = 3 V , RBE = VEB = 1 V , IC = 0 VCE = 2 V , IC = 10 mA VCB = 2 V , IE = 0 f = 1 MHz VCE = 2 V , IC = 10 mA f = 2 GHz VCE = 2 V , IC = 10 mA f = 1.8 GHz VCE = 2 V , IC = 3 mA f = 1.8 GHz
2SC5623
Main Characteristics
Collector Power Dissipation Curve Pc (mW) 200 hFE 200 DC Current Transfet Ratio vs. Collector Current VCE = 2 V
Collector Power Dissipatio
DC Current Transfer Ratio 50 100 150 Ta (C) 200
150
100
100
50
0 0 1 2 5 10 20 IC 50 (mA) 100
Ambient Temperature
Collector Current
(pF)
(GHz)
1.0
Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1MHz
50
Gain Bandwidth Product vs. Collector Current VCE = 2 V
Cob
0.8
40
Collector Output Capacitance
Gain Bandwidth Prodfuct 0.2 0.5 1 2 5 10
fT 0.6 30 20 0.4 0.2 10 0 0.1 0 1 2 5 10 20 50 100
Collector to Base Voltage
VCB (V)
Collector Current
I C (mA)
2SC5623
Power Gain vs. Collector Current 20 VCE = 2 V NF (dB) 16 (dB) 4 5 VCE = 2 V f = 1.8GHz Noise Figure vs. Collector Current
PG
12
3
Power Gain
8
Noise Figure f = 1.8GHz 2 5 10 20 50 100
2
4
1
0 1
0 1 2 5 10 20 50 100
Collector Current
I C (mA)
Collector Current
I C (mA)
20 |S21| (dB)
S21Parameter vs. Collector Current VCE = 2 V
16
2
12
S21 Parameter
8
4 f = 2GHz 1 2 5 10 20 50 100
0
Collector Current
I C (mA)
2SC5623
S11 Parameter vs. Frequency
.8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1 -1.5 -2 -120 -90 180 0 150 30 1 1.5 2
S21 Paramter vs. Frequency
90 120
Scale: 6 / div.
60
-150
-30
-60
Condition : V CE = 2 V , I C = 10 mA 100 to 3000 MHz (100 MHz step)
Condition : V CE = 2 V , I C = 10 mA 100 to 3000 MHz (100 MHz step)
S12 Parameter vs. Frequency
90 120
S22 Parameter vs. Frequency
.8 .6 .4 3 1 1.5 2
Scale: 0.02 / div.
60
150
30 .2
4 5 10
180
0
0
.2
.4
.6 .8 1
1.5 2
3 45
10 -10
-.2 -150 -30 -.4 -120 -60 -90 -.6 -.8 -1 -1.5 -2
-5 -4 -3
Condition : V CE = 2 V , I C = 10 mA 100 to 3000 MHz (100 MHz step)
Condition : V CE = 2 V , I C = 10 mA 100 to 3000 MHz (100 MHz step)
2SC5623
Sparameter ( VCE = 2 V, IC = 10 mA, Zo = 50 )
S11 f (MHz) MAG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 0.779 0.773 0.763 0.741 0.714 0.679 0.641 0.601 0.563 0.523 0.488 0.458 0.427 0.400 0.374 0.350 0.326 0.304 0.282 0.267 0.253 0.234 0.225 0.212 0.199 0.193 0.186 0.178 0.177 0.168 ANG -6.9 -14.5 -22.9 -31.4 -38.7 -46.2 -53.6 -59.7 -65.6 -70.7 -75.0 -80.1 -83.8 -88.9 -91.9 -96.1 -100.1 -102.9 -107.0 -110.8 -115.2 -118.7 -122.1 -127.9 -131.8 -135.2 -141.9 -146.0 -151.4 -157.0 S21 MAG 21.32 20.95 20.35 19.65 18.72 17.65 16.61 15.54 14.54 13.62 12.78 12.05 11.36 10.64 10.15 9.59 9.14 8.68 8.29 7.93 7.62 7.30 7.03 6.76 6.54 6.31 6.11 5.89 5.73 5.56 ANG 173.3 166.2 158.9 151.7 145.2 139.3 133.9 129.3 124.4 120.5 117.1 114.1 111.0 108.5 106.0 104.0 101.7 100.1 98.1 96.1 94.4 92.6 91.0 89.6 88.8 86.8 85.4 84.2 82.7 81.4 S12 MAG 0.0028 0.0064 0.0102 0.0142 0.0183 0.0222 0.0255 0.0286 0.0313 0.0335 0.0356 0.0376 0.0393 0.0410 0.0426 0.0441 0.0455 0.0469 0.0486 0.0500 0.0517 0.0527 0.0543 0.0557 0.0573 0.0579 0.0600 0.0612 0.0624 0.0642 ANG 95.3 92.6 91.8 87.0 83.4 79.7 75.6 72.7 69.5 67.8 66.0 64.1 62.8 62.4 61.0 61.1 60.4 59.7 59.1 59.2 59.3 59.2 58.6 58.4 58.2 58.3 58.2 58.2 58.3 57.8 S22 MAG 0.971 0.971 0.961 0.941 0.911 0.876 0.836 0.795 0.756 0.720 0.687 0.657 0.628 0.607 0.582 0.567 0.548 0.533 0.521 0.508 0.498 0.489 0.481 0.473 0.468 0.461 0.456 0.450 0.447 0.442 ANG -3.6 -7.5 -12.1 -16.7 -20.8 -24.7 -27.9 -30.8 -33.1 -34.9 -36.5 -37.5 -38.4 -38.9 -39.6 -39.8 -40.2 -40.2 -40.5 -40.5 -40.5 -40.7 -40.6 -40.7 -40.5 -40.7 -40.4 -40.6 -40.5 -40.9
2SC5623
Package Dimensions
Unit: mm
2.0 0.2 1.3 0.2
0.1 0.3 + 0.05 - 0.1 0.3 + 0.05 -
0.425
0.65 0.65
0.16- 0.06 2.1 0.3
+ 0.1
1.25 0.1
0 - 0.1
0.2
0.9 0.1
0.65 0.6 1.25 0.2
0.425
0.1 0.3 + 0.05 -
0.1 0.4 + 0.05 -
Hitachi Code JEDEC EIAJ Mass (reference value)
CMPAK-4(T) -- Conforms 0.006 g
2SC5623
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
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